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Highly doped GaN:Ge/GaN:Mg tunnel junctions for novel GaN-based optoelectronic devices

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Bibliographic Details
Published in: Verhandlungen der Deutschen Physikalischen Gesellschaft (2023), Artikel-ID HL 44.1
Authors and Corporations: Berger, Christoph (Author), Dadgar, Armin (Author), Strittmatter, André (Author)
Other Authors: Dadgar, Armin [Author] • Strittmatter, André [Author]
Type of Resource: E-Book Component Part
Language: English
Series: Deutsche Physikalische Gesellschaft: Verhandlungen der Deutschen Physikalischen Gesellschaft, (2023), Artikel-ID HL 44.1
, year:2023
Source: Verbunddaten SWB
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