Highly doped GaN:Ge/GaN:Mg tunnel junctions for novel GaN-based optoelectronic devices

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Published in:	Verhandlungen der Deutschen Physikalischen Gesellschaft year:2023; (2023), Artikel-ID HL 44.1; elocationid:HL 44.1
Authors and Corporations:	Berger, Christoph (Author), Dadgar, Armin (Author), Strittmatter, André (Author)
Other Authors:	Dadgar, Armin [Author] • Strittmatter, André [Author]
Type of Resource:	E-Book Component Part
Language:	English
published:	2023
Series:	Deutsche Physikalische Gesellschaft: Verhandlungen der Deutschen Physikalischen Gesellschaft, (2023), Artikel-ID HL 44.1
Source:	Verbunddaten SWB Lizenzfreie Online-Ressourcen

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