Empirical transport model of strained CNT transistors used for sensor applications

We present an empirical model for the near-ballistic transport in carbon nanotube (CNT) transistors used as strain sensors. This model describes the intrinsic effect of strain on the transport in CNTs by taking into account phonon scattering and thermally activated charge carriers. As this model rel...

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Bibliographic Details
Journal Title: Journal of Computational Electronics
Authors and Corporations: Wagner, Christian
In: Journal of Computational Electronics, 15, 2016, 3, p. 881-890
Type of Resource: E-Article
Springer US