Empirical transport model of strained CNT transistors used for sensor applications
We present an empirical model for the near-ballistic transport in carbon nanotube (CNT) transistors used as strain sensors. This model describes the intrinsic effect of strain on the transport in CNTs by taking into account phonon scattering and thermally activated charge carriers. As this model rel...
|Journal Title:||Journal of Computational Electronics|
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|In:||Journal of Computational Electronics, 15, 2016, 3, p. 881-890|
|Type of Resource:||E-Article|